Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition
نویسندگان
چکیده
Related Articles Improvement of optical performance of ZnO/GaN p-n junctions with an InGaN interlayer Appl. Phys. Lett. 101, 161905 (2012) Atomic structure of closely stacked InAs submonolayer depositions in GaAs J. Appl. Phys. 112, 083505 (2012) Experimental and molecular dynamics study of the growth of crystalline TiO2 J. Appl. Phys. 112, 073527 (2012) Degenerate crystalline silicon films by aluminum-induced crystallization of boron-doped amorphous silicon Appl. Phys. Lett. 101, 152108 (2012) Strain controlled systematic variation of metal-insulator transition in epitaxial NdNiO3 thin films J. Appl. Phys. 112, 073718 (2012)
منابع مشابه
Quantum coherent transport in SnTe topological crystalline insulator thin films
Articles you may be interested in Calculation of room temperature conductivity and mobility in tin-based topological insulator nanoribbons Topological insulator Bi2Te3 films synthesized by metal organic chemical vapor deposition Appl.
متن کاملHigh mobility, large linear magnetoresistance, and quantum transport phenomena in Bi2Te3 films grown by metallo-organic chemical vapor deposition (MOCVD).
We investigated the magnetotransport properties of Bi2Te3 films grown on GaAs (001) substrate by a cost-effective metallo-organic chemical vapor deposition (MOCVD). We observed the remarkably high carrier mobility and the giant linear magnetoresistance (carrier mobility ∼ 22 000 cm(2) V(-1) s(-1), magnetoresistance ∼ 750% at 1.8 K and 9 T for a 100 nm thick film) that depends on the film thickn...
متن کاملMetal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric
Ce–Al–O thin films were prepared on 70 nm TiN/Si(1 0 0) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal–insulator–metal (MIM) applications. Depositions were carried out at 400 C using two separate Ce and Al precursors. In order to get Ce–Al–O films with different stoichiometry, Al2O3 and CeO2 were mixed with different Ce:Al precursors’ ratios. Accordi...
متن کاملFabrication of Metal-insulator-metal Capacitors with SiNx Thin Films Deposited by Plasma-enhanced Chemical Vapor Deposition
For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 Å plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the SiH4/NH3 gas mixing rate, working pressure, and RF power of PECVD at 250oC. Five PECVD process parameters are designed to lower the refractive index and ...
متن کاملPhysical and electrical properties of MOCVD and ALD deposited HfZrO4 gate dielectrics for 32nm CMOS high performance logic SOI technologies
The physical properties of metal-organic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD) deposited HfZrO4 films have been analyzed in detail by atom probe tomography, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, transmission electron microscopy, atomic force microscopy, variable angle spectroscopic ellipsometry as well as temperature dependent gr...
متن کامل